1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds( on) (ohm) i d (a) 0.130 @ v gs = -4.5v 2.5 0.190 @ v gs = -2.5v 1.9 -20 mosfet product summary p-channel 20-v (d-s) mosfet with schottky diode ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol typ max t <= 10 sec 93 110 steady state 130 150 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter v f (v) diode forward voltage 20 0.48v @ 1.0a 1.0 schottky product summary v ka (v) i f (a) symbol maximum units v ds -20 v ka 20 v gs 8 t a =25 o c2.5 t a =70 o c1.9 i dm 10 i s -1.6 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1.0 t a =70 o c0.6 t j , t stg -55 to 150 o c maximum power dissipation (schottky) a operating junction and storage temperature range p d w absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current (mosfet) b gate-source voltage (mosfet) reverse voltage (schottky) continuous drain current (t j =150 o c) (mosfet) a i d a drain-source voltage (mosfet) continuous source current (mosfet diode conduction) a average forward current (schottky) maximum power dissipation (mosfet) a pulsed forward current (schottky) v s d g p-channel mosfet k a tsop-6 top view 1 2 34 k n/c d 6 5 g a s ao67 01 / mc67 01 freescale www.freescale.net.cn
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . min typ max i f = 0.5 a 0.48 v i f = 0.5 a, t j = 125 o c 0.4 v v r = 30 v 0.1 v r = 30 v, t j = 75 o c 1 v r = 30 v, t j = 125 o c 10 junction capacitance c t v r = 10 v 31 pf forward voltage drop v f schottky specifications (t a = 25 o c unless otherwise noted) ma i rm maximum reverse leakage current test conditions symbol parameter limits unit min typ max gate-threshold voltage v gs(t h) v ds = v gs , i d = -250 ua -0.4 gate-body leakage i gss v ds = 0 v, v gs = +/-8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -2.5 a 0.130 v gs = -2.5 v, i d = -1.9 a 0.190 forward tranconductance a g fs v ds = -5 v, i d = -2.5 a 3 s diode forward voltage v sd i s = -1.6 a, v gs = 0 v -0.70 v total gate charge q g 6.0 gate-source charge q gs 0.80 gate-drain charge q gd 1.30 turn-on delay time t d(on) 6.5 ri s e ti me t r 20 turn-off delay time t d(of f ) 31 fall-time t f 21 v dd = -5 v, r l = 5 ohm, v gen = -4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynamic b v ds = -5 v, v gs = -4.5 v, i d = -2.5 a nc ? r ds(on) mosfet specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter lim its unit ao67 01 / mc67 01 freescale www.freescale.net.cn freescale reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in freescale data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju ry or death may occur. should buyer purchase or use freescale products for any such uninte nded or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an equal opportunity/affirmative action employer.
3 typical electrical characteristics figure 2. on-resistance variation with drain current and gate voltage figure 1. on-region characteristics figure 4. on-resistance variation with gate to source voltage figure 3. on-resistance variation with temperature figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics ao67 01 / mc67 01 freescale www.freescale.net.cn
4 typical electrical characteristics normalized thermal transien t junction to ambient figure 8. capacitance characteristic figure 7. gate charge characteristic figure 10. single pulse maximum power dissipation figure 9. maximum safe operating area ao67 01 / mc67 01 freescale www.freescale.net.cn
5 package information tsop-6: 6lead ao67 01 / mc67 01 freescale www.freescale.net.cn
|
